Single-Crystal Gallium Oxide Substrates

Gallium oxide is a chemical compound with 2:3 stoichiometric ratio of gallium ( Ga ) to oxygen ( O ) .
Crystal structure is Monoclinic as in the drawing below.
Items  
Data
 Melting point 1725℃
 Density 5.95×103kg/m3
 Vickers hardness
 (101):9.7GPa
 (-201):12.5GPa
 Young's modulus
 230GPa
 Thermal conductivity
 [100]:13.6W/m・K
 [010]:22.8W/m・K
 Specific heat capacity
 0.49×103J/kg・K
 Refractive index
 1.97


Characteristics :
  - Large band gap energy (4.8~4.9V)
  - Wide area n-type conductivity control
  - High speed melt growth under atmospheric pressure
Our company produces single-crystal gallium oxide using the melt growth method "EFG" (Edge-defined Film-fed Growth method) with most stable β-type crystal structure.



Applications

1) Substrate for Visible / Ultraviolet LED
  Vertical LED structure by "transparent and conductive" characteristics of Gallium oxide substrate.

2) Substrate for Power semiconductor
  High-breakdown Voltage and Low-Loss devices by "Large band gap energy" characteristics of Gallium oxide substrate.

3) Ultraviolet detector
  Ultraviolet detectors can be designed without the optical filter.

and others.



Products

- Gallium oxide substrates   Specifications:pdf




Conference Exhibit




Inquiry
SEMICONDUCTOR DEVELOPMENT DEPT.
e-mail : sales.gao@tamura-ss.co.jp

TOP